Effect of ion implantation on material removal mechanism of 6H-SiC in nano-cutting: A molecular dynamics study-Reference-Cited by-同舟云学术

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Effect of ion implantation on material removal mechanism of 6H-SiC in nano-cutting: A molecular dynamics study

Published:2020-03 Issue: Volume:174 Page:109476
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Liu Bing^ORCID,Xu Zongwei,Wang Yong,Gao Xiang,Kong Ruijie

Funder

National Natural Science Foundation of China

Natural Science Foundation of Tianjin

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference28 articles.

1. Experimental investigation of surface/subsurface damage formation and material removal mechanisms in SiC grinding;Agarwal;Int. J. Mach. Tools Manuf.,2008

2. Atomic-scale characterization of subsurface damage and structural changes of single-crystal silicon carbide subjected to electrical discharge machining;Tan;Acta Mater.,2017

3. 2D Raman mapping and thermal residual stresses in SiC grains of ZrB2-SiC ceramic composites;Stadelmann;Ceram. Int.,2015

4. Advanced residual stress analysis and FEM simulation on heteroepitaxial 3CSiC for MEMS application;Anzalone;J. Microelectromechanical Syst.,2011

5. The mechanism of ductile deformation in ductile regime machining of 6H SiC;Xiao;Comput. Mater. Sci.,2015

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2. Study of stress-assisted nano-cutting mechanism of gallium arsenide;Applied Surface Science;2024-11

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4. Towards a better understanding of the surface smoothing effect in gas cluster ion beam processing with molecular dynamics simulation and experiment;Optics Express;2024-08-19

5. Nano-cutting mechanism of ion implantation-modified SiC: reducing subsurface damage expansion and abrasive wear;Nanotechnology;2024-06-04

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