Relation Between Resistance Drift and Optical Gap in Phase Change Materials-Reference-Cited by-同舟云学术

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Relation Between Resistance Drift and Optical Gap in Phase Change Materials

Published:2020-09-07 Issue:10 Volume:3 Page:2000117
ISSN:2513-0390
Container-title:Advanced Theory and Simulations
language:en
Short-container-title:Adv. Theory Simul.

Author:

Martinez Jose C.¹^ORCID,Simpson Robert E.¹

Affiliation:

1. Engineering and Production Development Singapore University of Technology and Design 8 Somapah Rd Singapore 487372 Singapore

Publisher

Wiley

Subject

Multidisciplinary,Modeling and Simulation,Numerical Analysis,Statistics and Probability

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adts.202000117

Reference96 articles.

1. Role of mechanical stress in the resistance drift of Ge2Sb2Te5 films and phase change memories

2. Construction of orderly hierarchical FeOOH/NiFe layered double hydroxides supported on cobaltous carbonate hydroxide nanowire arrays for a highly efficient oxygen evolution reaction

3. Microscopic origin of resistance drift in the amorphous state of the phase-change compound GeTe

4. Effects of Resonance Bonding on the Properties of Crystalline and Amorphous Semiconductors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phase-Change Materials, 1/f Noise, and Phase Synchrony;Advances in Materials Science and Engineering;2022-11-22

2. Unveiling structural characteristics for ultralow resistance drift in BiSb-Ge2Sb2Te5 materials for phase-change neuron synaptic devices;Journal of Alloys and Compounds;2022-02

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