Role of mechanical stress in the resistance drift of Ge2Sb2Te5 films and phase change memories
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3664631
Reference22 articles.
1. Phase-change materials for rewriteable data storage
2. Phase Change Materials and Their Application to Nonvolatile Memories
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4. Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories
5. Fundamental drift of parameters in chalcogenide phase change memory
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