Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials-Reference-Cited by-同舟云学术

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Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials

Published:2004-05 Issue:5 Volume:51 Page:714-719
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Pirovano A.,Lacaita A.L.,Pellizzer F.,Kostylev S.A.,Benvenuti A.,Bez R.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/28966/01303829.pdf?arnumber=1303829

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