High‐Performance Spin Filters and Spin Field Effect Transistors Based on Bilayer VSe 2-Reference-Cited by-同舟云学术

High‐Performance Spin Filters and Spin Field Effect Transistors Based on Bilayer VSe 2

Published:2020-12-16 Issue:2 Volume:4 Page:2000238
ISSN:2513-0390
Container-title:Advanced Theory and Simulations
language:en
Short-container-title:Adv. Theory Simul.

Author:

Wu Baochun¹^ORCID,Quhe Ruge²,Yang Jie¹,Liu Shiqi¹,Shi Junjie¹,Lu Jing¹³⁴⁵,Du Honglin¹³⁴

Affiliation:

1. State Key Laboratory for Mesoscopic Physics and Department of Physics Peking University Beijing 100871 P. R. China

2. State Key Laboratory of Information Photonics and Optical Communications and School of Science Beijing University of Posts and Telecommunications Beijing 100876 P. R. China

3. Beijing Key Laboratory for Magnetoelectric Materials and Devices Peking University Beijing 100871 P. R. China

4. Collaborative Innovation Center of Quantum Matter Beijing 100871 P. R. China

5. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics Peking University Beijing 100871 P. R. China

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Wiley

Subject

Multidisciplinary,Modelling and Simulation,Numerical Analysis,Statistics and Probability

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adts.202000238

Reference52 articles.

1. Emergent phenomena induced by spin–orbit coupling at surfaces and interfaces

2. Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3

3. Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling

4. Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures

5. Absence of Ferromagnetism or Antiferromagnetism in One- or Two-Dimensional Isotropic Heisenberg Models

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