Equivalent‐circuit–based modeling of the scattering and noise parameters for multi‐finger GaAs pHEMTs
Author:
Affiliation:
1. Department of EngineeringUniversity of Messina Messina Italy
2. Department of Biomedical and Dental Sciences and Morphofunctional ImagingUniversity of Messina Messina Italy
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.2587
Reference26 articles.
1. On the performance of low-noise low-DC-power-consumption cryogenic amplifiers
2. GaAs HEMT low-noise cryogenic amplifiers from C-band to X-band with 0.7-K/GHz noise temperature
3. Noise Measurements of Discrete HEMT Transistors and Application to Wideband Very Low-Noise Amplifiers
4. Millimetric LNAs for astronomy: characterization at cryogenic temperature
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