Study of GaSb Valence Band by Magnetoresistance and Hall Effect Measurements at Low Temperature
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Energy Band Structure of Gallium Antimonide
2. The valence band structure of the III–V compounds
3. Masse effective des porteurs de charge dans les semi-conducteurs
4. Galvanomagnetic Effects in Semiconductors, in: Solid State Phys., Suppl. 4( 1963).
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Determination of the scattering mechanisms in p-type semiconductors of the III–V group: The case of Zn-doped GaP and natural (undoped) GaSb;Solid State Communications;1988-08
2. Influence of the linear k term on the shape of the isoenergetic surfaces in p-type GaSb, deduced from galvanomagnetic measurements;Journal of Physics and Chemistry of Solids;1973-12
3. The Specific Heat and Resistivity of p-Type Gallium Antimonide between 0.3 and 4 K;Physica Status Solidi (b);1973-12-01
4. Residual acceptors in natural GaSb and Gaxln1−xSb; their contribution to transport between 4.7 and 300 °K;Journal of Applied Physics;1973-06
5. Determination of the energy separation ΔEc of the two minima of the conduction band of GaSb and its variation with temperature;Physica Status Solidi (a);1970-10-16
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