Masse effective des porteurs de charge dans les semi-conducteurs-Reference-Cited by-同舟云学术

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Masse effective des porteurs de charge dans les semi-conducteurs

Published:1963 Issue:10 Volume:3 Page:1751-1789
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Rodot M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference159 articles.

1. Methoden zur Berechnung des Energiespektrums in Idealkristallen

2. Wave mechanics of crystalline solids, Chapman & Hall, London 1961.

3. �ber die Quantenmechanik der Elektronen in Kristallgittern

4. communication privée (1962).

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1. Semiconducting diamond as material for high temperature thermistors;Materials Research Innovations;2000-11

2. Effective masses of electrons and heavy holes in GaAs, InAs, A1As and their ternary compounds;Physica B: Condensed Matter;1995-04

3. Optical Effective Mass of Holes in p-Type AIIIBV Compounds;physica status solidi (b);1974-04-01

4. Magnetooptic Faraday effect in semiconductors;Uspekhi Fizicheskih Nauk;1973

5. The influence of uniaxial stress on the infrared free carrier faraday effect in n-type silicon and germanium;Journal of Physics C: Solid State Physics;1971-02-01

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