Ultra‐Confined Catalytic Growth Integration of Sub‐10 nm 3D Stacked Silicon Nanowires Via a Self‐Delimited Droplet Formation Strategy

Author:

Hu Ruijin1,Liang Yifei1,Qian Wentao1,Gan Xin1,Liang Lei1,Wang Junzhuan1,Liu Zongguang1,Shi Yi1,Xu Jun1,Chen Kunji1,Yu Linwei1ORCID

Affiliation:

1. School of Electronics Science and Engineering/National Laboratory of Solid‐State Microstructures Nanjing University Nanjing 210093 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference42 articles.

1. H.Mertens R.Ritzenthaler A.Hikavyy M. S.Kim Z.Tao K.Wostyn S. A.Chew A. D.Keersgieter G.Mannaert E.Rosseel T.Schram K.Devriendt D.Tsvetanova H.Dekkers S.Demuynck A.Chasin E. V.Besien A.Dangol S.Godny B.Douhard N.Bosman O.Richard J.Geypen H.Bender K.Barla D.Mocuta N.Horiguchi A. V. Y.Thean presented at2016 IEEE Symp. on VLSI Technology IEEE Piscataway New Jersey USA2016 1.

2. S.Barraud B.Previtali C.Vizioz J. M.Hartmann J.Sturm J.Lassarre C.Perrot P.Rodriguez V.Loup A.Magalhaes‐Lucas R.Kies G.Romano M.Cassé N.Bernier A.Jannaud A.Grenier F.Andrieu presented at2020 IEEE Symp. on VLSI Technology IEEE Piscataway New Jersey USA2020 1.

3. Ion sensing with single charge resolution using sub–10-nm electrical double layer–gated silicon nanowire transistors

4. Quantum-coherent nanoscience

5. The path to scalable quantum computing with silicon spin qubits

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