Enhanced Performance of WS <sub>2</sub> Field‐Effect Transistor through Mono and Bilayer h‐BN Tunneling Contacts-Reference-Cited by-同舟云学术

Enhanced Performance of WS ₂ Field‐Effect Transistor through Mono and Bilayer h‐BN Tunneling Contacts

Published:2022-02-03 Issue:13 Volume:18 Page:2105753
ISSN:1613-6810
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language:en
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Author:

Phan Nhat Anh Nguyen¹^ORCID,Noh Hamin¹,Kim Jihoon¹,Kim Yewon¹,Kim Hanul²,Whang Dongmok²³,Aoki Nobuyuki⁴^ORCID,Watanabe Kenji⁵^ORCID,Taniguchi Takashi⁶,Kim Gil‐Ho¹²^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea

2. Samsung‐SKKU Graphene Centre Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea

3. School of Advanced Materials Science and Engineering Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea

4. Department of Materials Science Chiba University Chiba 263–8522 Japan

5. Research Center for Functional Materials National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

6. International Center for Material Nano‐Architectonics National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

Funder

National Research Foundation of Korea

Core Research for Evolutional Science and Technology

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

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