Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure-Reference-Cited by-同舟云学术

Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure

Published:2018-06-25 Issue:28 Volume:10 Page:23961-23967
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Khan Muhammad Atif¹,Rathi Servin¹,Lee Changhee¹,Lim Dongsuk¹,Kim Yunseob¹,Yun Sun Jin²^ORCID,Youn Doo-Hyeb²,Kim Gil-Ho¹^ORCID

Affiliation:

1. School of Electronic and Electrical Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, South Korea

2. ICT Components and Materials Technology Research Division, Electronics and Telecommunications Research Institute, Daejeon 34129, South Korea

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b05549

Reference48 articles.

1. 2D materials and van der Waals heterostructures