In Situ Atomic‐Scale Observation of Monolayer MoS <sub>2</sub> Devices under High‐Voltage Biasing via Transmission Electron Microscopy-Reference-Cited by-同舟云学术

In Situ Atomic‐Scale Observation of Monolayer MoS ₂ Devices under High‐Voltage Biasing via Transmission Electron Microscopy

Published:2022-01-07 Issue:7 Volume:18 Page:2106411
ISSN:1613-6810
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Author:

Tseng Yi‐Tang¹,Lu Li‐Syuan²,Shen Fang‐Chun¹,Wang Che‐Hung¹,Sung Hsin‐Ya¹,Chang Wen‐Hao²³,Wu Wen‐Wei¹⁴^ORCID

Affiliation:

1. Department of Materials Science and Engineering National Yang Ming Chiao Tung University No. 1001, University Rd., East Dist. Hsinchu City 30010 Taiwan

2. Department of Electrophysics National Yang Ming Chiao Tung University No. 1001, University Rd., East Dist. Hsinchu City 30010 Taiwan

3. Research Center for Applied Sciences Academia Sinica No. 128, Sec. 2, Academia Rd., Nangang Dist. Taipei City 11529 Taiwan

4. Center for the Intelligent Semiconductor Nano‐system Technology Research National Yang Ming Chiao Tung University No. 1001, University Rd., East Dist. Hsinchu City 30010 Taiwan

Funder

Ministry of Science and Technology

Ministry of Science and Technology, Taiwan

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.202106411

Reference49 articles.

1. Single-layer MoS2 transistors

2. Synthesis of Large-Area MoS2Atomic Layers with Chemical Vapor Deposition