Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure-Reference-Cited by-同舟云学术

Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure

Published:2019-07-25 Issue:8 Volume:13 Page:9638-9646
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Pak Jinsu¹,Lee Ilmin²,Cho Kyungjune¹,Kim Jae-Keun¹,Jeong Hyunhak¹,Hwang Wang-Taek¹,Ahn Geun Ho³^ORCID,Kang Keehoon¹,Yu Woo Jong²⁴^ORCID,Javey Ali³,Chung Seungjun⁵,Lee Takhee¹^ORCID

Affiliation:

1. Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea

2. Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea

3. Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States

4. Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea

5. Photo-Electronic Hybrids Research Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea

Funder

Basic Energy Sciences

National Research Foundation of Korea

Institute for Basic Science

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.9b04829

Reference46 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. 2D transition metal dichalcogenides

3. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

4. Recent Advances in Two-Dimensional Materials beyond Graphene

5. High-Gain Phototransistors Based on a CVD MoS2Monolayer

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