Broadening spectral responses and achieving environmental stability in SnS2/Ag-NPs/HfO2 flexible phototransistors

Author:

Khan Muhammad Farooq1ORCID,Sadaqat Sana2,Khan Muhammad Asghar3,Rehman Shania4ORCID,Subhani Waqas Siddique5,Ouladsmane Mohamed6,Rehman Malik Abdul7,Ali Fida8ORCID,Lipsanen Harri8ORCID,Sun Zhipei8ORCID,Eom Jonghwa3ORCID,Ahmed Faisal8ORCID

Affiliation:

1. Department of Electrical Engineering, Sejong University, Seoul 05006, Republic of Korea

2. Department of Physics, Riphah International University, Faisalabad Campus, 44000, Pakistan

3. Department of Physics and Astronomy, Sejong University, Seoul 05006, Republic of Korea

4. Department of Semiconductor System Engineering, Sejong University, Seoul 05006, Republic of Korea

5. Department of Physics, University of Lahore, Lahore, 53700, Pakistan

6. Department of Chemistry, College of Science, King Saud University, Riyadh, 11451, Saudi Arabia

7. Department of Chemical Engineering, New Uzbekistan University, Tashkent, 100007, Uzbekistan

8. Department of Electronics and Nano Engineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland

Abstract

The decoration of Ag-NPs and passivation with HfO2 provide a simple route to realize broadband and stable photoactivity in SnS2 photodetectors.

Funder

National Research Foundation

King Saud University

Academy of Finland

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

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