Gas‐Phase Alkali Metal‐Assisted MOCVD Growth of 2D Transition Metal Dichalcogenides for Large‐Scale Precise Nucleation Control-Reference-Cited by-同舟云学术

Gas‐Phase Alkali Metal‐Assisted MOCVD Growth of 2D Transition Metal Dichalcogenides for Large‐Scale Precise Nucleation Control

Published:2022-04-21 Issue:20 Volume:18 Page:2106368
ISSN:1613-6810
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language:en
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Author:

Kim Tae Soo¹^ORCID,Dhakal Krishna P.²,Park Eunpyo³,Noh Gichang¹³,Chai Hyun‐Jun¹,Kim Youngbum²,Oh Saeyoung¹,Kang Minsoo¹,Park Jeongwon¹,Kim Jaewoo¹,Kim Suhyun¹,Jeong Hu Young⁴,Bang Sunghwan⁵,Kwak Joon Young³,Kim Jeongyong²,Kang Kibum¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

2. Department of Energy Science Sungkyunkwan University Suwon 16419 Republic of Korea

3. Center for Neuromorphic Engineering Korea Institute Science and Technology (KIST) Seoul 02792 Republic of Korea

4. UNIST Central Research Facilities (UCRF) and Departmet of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea

5. Materials & Production Engineering Research Institute LG Electronics Pyeongtaek‐si 17709 Republic of Korea

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.202106368

Reference50 articles.

1. Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics

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3. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

4. Wafer-Scale Highly Oriented Monolayer MoS2 with Large Domain Sizes

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