Affiliation:
1. CAS Key Laboratory of Nanosystem and Hierarchical Fabrication CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology Beijing 100190 China
2. University of Chinese Academy of Sciences Beijing 100049 China
3. The GBA National Institute for Nanotechnology Innovation Guangdong 510700 China
Abstract
AbstractHigh‐performance optoelectronic nonvolatile memory is promising candidate for next‐generation information memory devices. Here, a floating‐gate memory is constructed based on van der Waals heterostructure, which exhibits a large storage window ratio (≈75.5%) and an extremely high on/off ratio (107), as well as an ultrafast electrical writing/erasing speed (40 ns). The enhanced performance enables as‐fabricated devices to present excellent multilevel data storage, robust retention, and endurance performance. Moreover, stable optical erasing operations can be achieved by illuminating the device with a laser pulse, showcasing outstanding optoelectronic storage performance (optical erasing speed ≈ 2.3 ms). The nonvolatile and high‐speed characteristics of these devices hold significant potential for the integration of high‐performance nonvolatile memory.
Funder
National Natural Science Foundation of China
Subject
Biomaterials,Biotechnology,General Materials Science,General Chemistry
Cited by
2 articles.
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