Interface Engineering Ti 3 C 2 MXene/Silicon Self‐Powered Photodetectors with High Responsivity and Detectivity for Weak Light Applications-Reference-Cited by-同舟云学术

Interface Engineering Ti 3 C 2 MXene/Silicon Self‐Powered Photodetectors with High Responsivity and Detectivity for Weak Light Applications

Published:2021-04-23 Issue:23 Volume:17 Page:2100439
ISSN:1613-6810
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language:en
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Author:

Song Weidong¹²,Liu Qing³,Chen Jiaxin²,Chen Zhao¹,He Xin¹,Zeng Qingguang¹,Li Shuti³,He Longfei⁴,Chen Zhitao⁴,Fang Xiaosheng²^ORCID

Affiliation:

1. College of Applied Physics and Materials Wuyi University 22 Dongcheng Village Jiangmen 529020 P. R. China

2. Department of Materials Science Fudan University Shanghai 200433 P. R. China

3. Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices Institute of Semiconductors South China Normal University Guangzhou 510631 P. R. China

4. Guangdong Institute of Semiconductor Industrial Technology Guangdong Academy of Sciences Guangzhou 510650 P. R. China

Funder

Natural Science Foundation of Guangdong Province

National Natural Science Foundation of China

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.202100439

Reference45 articles.

1. 2D material broadband photodetectors

2. Graphene‐Based Mixed‐Dimensional van der Waals Heterostructures for Advanced Optoelectronics

3. Mixed-dimensional van der Waals heterostructures

4. Photodetectors based on graphene, other two-dimensional materials and hybrid systems

5. Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

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