Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces-Reference-Cited by-同舟云学术

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

Published:2020-03-20 Issue:4 Volume:20 Page:2907-2915
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Miao Jinshui¹,Liu Xiwen¹,Jo Kiyoung¹,He Kang²,Saxena Ravindra¹,Song Baokun¹,Zhang Huiqin¹,He Jiale³,Han Myung-Geun⁴^ORCID,Hu Weida³^ORCID,Jariwala Deep¹^ORCID

Affiliation:

1. Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States

2. Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States

3. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

4. Brookhaven National Laboratory, Upton, New York 11973, United States

Funder

U.S. Department of Defense

University of Pennsylvania

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.0c00741

Reference51 articles.

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2. Mixed-dimensional van der Waals heterostructures

3. Atomically thin p–n junctions with van der Waals heterointerfaces

4. Van der Waals integration before and beyond two-dimensional materials

5. 2D materials and van der Waals heterostructures

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