Structural stability and evolution of terbium‐doped silicon clusters and influence of 4 f → 5 d electronic transition mechanism on magnetism and appearance of photoelectron spectroscopy for TbSi n 0/− ( n = 6‐18) clusters-Reference-Cited by-同舟云学术

Structural stability and evolution of terbium‐doped silicon clusters and influence of 4 f → 5 d electronic transition mechanism on magnetism and appearance of photoelectron spectroscopy for TbSi n 0/− ( n = 6‐18) clusters

Published:2019-10-23 Issue:3 Volume:120 Page:
ISSN:0020-7608
Container-title:International Journal of Quantum Chemistry
language:en
Short-container-title:Int J Quantum Chem

Author:

Gu Yansong¹,Yang Jucai¹²,Cheng Lin¹^ORCID

Affiliation:

1. School of Chemical Engineering, Inner Mongolia University of Technology Inner Mongolia Key Laboratory of Theoretical and Computational Chemistry Simulation Hohhot China

2. School of Energy and Power Engineering Inner Mongolia University of Technology Hohhot China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Physical and Theoretical Chemistry,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/qua.26087

Reference65 articles.

1. Erbium in silicon

2. A New Anisotropic Bonded NdFeB Permanent Magnet and Its Application to a Small DC Motor