Elementary gas‐phase reactions of radical species during chemical vapor deposition of silicon carbide using CH 3 SiCl 3-Reference-Cited by-同舟云学术

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Elementary gas‐phase reactions of radical species during chemical vapor deposition of silicon carbide using CH 3 SiCl 3

Published:2021-01-11 Issue:5 Volume:53 Page:638-645
ISSN:0538-8066
Container-title:International Journal of Chemical Kinetics
language:en
Short-container-title:Int. J. Chem. Kinet.

Author:

Sato Noboru¹,Funato Yuichi¹,Shima Kohei¹,Sugiura Hidetoshi¹,Fukushima Yasuyuki²,Momose Takeshi¹,Koshi Mitsuo³,Shimogaki Yukihiro¹

Affiliation:

1. Department of Materials Engineering The University of Tokyo Bunkyo‐ku Tokyo 113‐8656 Japan

2. Advanced Applied Science Department Research Laboratory IHI Corporation Isogo‐ku Yokohama 235‐8501 Japan

3. Center for Low Carbon Society Strategy Japan Science and Technology Agency Chiyoda‐ku Tokyo 102‐8666 Japan

Publisher

Wiley

Subject

Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Biochemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/kin.21470

Reference34 articles.

1. Design, preparation and properties of non-oxide CMCs for application in engines and nuclear reactors: an overview

2. SiC-Matrix Composites: Nonbrittle Ceramics for Thermo-Structural Application

3. Thermal and Environmental Barrier Coatings for SiC/SiC CMCs in Aircraft Engine Applications*

4. Carbon, carbide and silicide coatings

5. Reactional mechanisms of the chemical vapour deposition of SiC-based ceramics from gas precursor

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1. Stepwise Reaction for Chemical Vapor Deposition of Stoichiometric SiC Films Using Methyltrichlorosilane and Hydrogen as Reactants;Industrial & Engineering Chemistry Research;2024-08-28

2. The investigation of initial decomposition paths of methyltrichlorosilane on (0001) and (0001¯) surfaces of 4H-SiC: A DFT study;Surface Science;2024-06

3. Ab initio study of the mechanism of carbonization of {111} Si-substrate at high temperature;Materials Chemistry and Physics;2024-04

4. Kinetic study on heterogeneous nucleation and incubation period during chemical vapor deposition;The Journal of Chemical Physics;2023-03-22

5. Identifying the mechanism of formation of chlorinated silane polymer by‐products during chemical vapor infiltration of SiC from CH ₃ SiCl ₃ /H ₂;International Journal of Chemical Kinetics;2022-01-13

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