Ab initio study of the mechanism of carbonization of {111} Si-substrate at high temperature-Reference-Cited by-同舟云学术

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Ab initio study of the mechanism of carbonization of {111} Si-substrate at high temperature

Published:2024-04 Issue: Volume:317 Page:129180
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Kalchevski Dobromir A.^ORCID,Trifonov Dimitar V.^ORCID,Kolev Stefan K.^ORCID,Aleksandrov Hristiyan A.,Milenov Teodor I.

Funder

Bulgarian National Science Fund

Publisher

Elsevier BV

Reference55 articles.

1. Silicon carbide: synthesis and processing;Wesch;Nucl. Instrum. Methods Phys. Res. B,1996

2. Advances in nanostructured silicon carbide photocatalysts;He;Acta Phys. Chim. Sin.,2022

3. Recent advances and challenges in silicon carbide (SiC) ceramic nanoarchitectures and their applications;Man;Mater. Today Commun.,2021

4. Silicon Carbide: Synthesis and Properties. Properties and Applications of Silicon Carbide;Abderrak,2011

5. Growth characteristics of CVD beta‐silicon carbide;Cheng;J. Electrochem. Soc.,1987

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