SiOyNx/SiNxstack: a promising surface passivation layer for high-efficiency and potential-induced degradation resistant mc-silicon solar cells

Author:

Zhou Chunlan1,Zhu Junjie2,Zhou Su1,Tang Yehua3,Foss Sean E.2,Haug Halvard2,Nordseth Ørnulf2,Marstein Erik S.2,Wang Wenjing1

Affiliation:

1. The Key Laboratory of Solar Thermal Energy and Photovoltaic System; Institute of Electrical, Engineering, Chinese Academy of Science; Beijing China

2. Solar Energy Department, Institute for Energy Technology; Instituttveien 18 2007 Kjeller Norway

3. Eoplly New Energy Technology Co., Ltd; Nantong 226000 China

Funder

Norges Forskningsråd

National High Technology Research and Development Program of China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Composition and optical properties of silicon oxynitride films deposited by electron cyclotron resonance;Prado;Vacuum,2002

2. Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation;Dupuis;Thin Solid Films,2008

3. Surface passivation of crystalline silicon by plasma-enhanced chemical vapor deposition double layers of silicon-rich silicon oxynitride and silicon nitride;Seiffe;Journal of Applied Physics,2011

4. Seiffe J Weiss L Hofmann M Gautero L Rentsch J Alternative Rear Surface Passivation for Industrial Cell Production 2008

5. Laades A Blech M Biank HC Maier C Roczen M Leschinski C. Strutzberg H Lawerenz A Fudamental Study of Silicon Oxynitrides for Photovoltaic Applications 2011

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