Enhanced emission efficiency of InGaN films with Si doping
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference9 articles.
1. Excitation energy transfer between luminescent centers of microcrystalline InGaN
2. Impurity doping effect on thermal stability of InGaN∕GaN multiple quantum-well structures
3. Silicon doping effect on the optical properties of In0.15Ga0.85N/In0.015Ga0.985N quantum wells
4. Spiral growth of InGaN/InGaN quantum wells due to Si doping in the barrier layers
5. Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Morphological and Structural Properties on SIMS Depth Profiles of InGaN/GaN Multiple Quantum Wells Grown on Sapphire by MOCVD;Journal of Molecular and Engineering Materials;2015-09
2. Influence of Si doping on the structural and optical properties of InGaN epilayers;Chinese Physics B;2013-10
3. Marked suppression of In incorporation in heavily Si-doped InxGa1−xN (x ∼ 0.3) grown on GaN/α-Al2O3(0001) template;Applied Physics Letters;2013-08-19
4. Effects of annealing on structural and optical properties of InGaN/GaN multiple quantum wells at emission wavelength of 490 nm;Journal of Applied Physics;2011-09-15
5. Investigation of the electrical activity of V-defects in GaN using scanning force microscopy;SPIE Proceedings;2009-02-12
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