Marked suppression of In incorporation in heavily Si-doped InxGa1−xN (x ∼ 0.3) grown on GaN/α-Al2O3(0001) template
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4819075
Reference18 articles.
1. Recent advances in InN-based solar cells: status and challenges in InGaN and InAlN solar cells
2. Luminescence spectra from InGaN multiquantum wells heavily doped with Si
3. Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes
4. Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures
5. Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer
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