HVPE growth of a thick GaN layer on a GaN templated (111) Si substrate
Author:
Affiliation:
1. Department of Electronics, Nagoya University, Chikusa‐ku, Nagoya 464‐8603, Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303512
Reference10 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
3. Improvement of Crystalline Quality in GaN Films by Air-Bridged Lateral Epitaxial Growth
4. Anti-Surfactant in III-Nitride Epitaxy -- Quantum Dot Formation and Dislocation Termination --
5. HVPE Growth of GaN on a GaN Templated (111) Si Substrate
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures;Semiconductor Science and Technology;2016-04-28
2. HVPE growth of semi-polar (112¯2)GaN on GaN template (113)Si substrate;Journal of Crystal Growth;2009-05
3. ELECTRICAL RESISTANCE OF CRACK-FREE GaN/AlN HETEROSTRUCTURE GROWN ON Si(111);Journal of Nonlinear Optical Physics & Materials;2008-09
4. Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure;Japanese Journal of Applied Physics;2006-05-09
5. Uniform growth of GaN on AlN templated (111)Si substrate by HVPE;physica status solidi (c);2005-04-11
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