High‐efficiency 350 nm‐band quaternary InAlGaN‐based UV‐LED on GaN/sapphire template
Author:
Affiliation:
1. RIKEN (The Institute of Physical and Chemical Research), 2‐1 Hirosawa, Wako‐shi, Saitama, 351‐0198 Japan
2. Sumitomo Electric Industries, Ltd., Semiconductor R&D Laboratories, 1‐1‐1, Koyakita, Itami, Hyogo, 664‐0016 Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461446
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