Energy transfer to Er 3+ ions in a‐Si 1− x C x :H alloys: emission at 1.54 mm wavelength
Author:
Affiliation:
1. Philipps‐Universität Marburg, Fachbereich Physik und Zentrum für Materialwissenschaften, 35032 Marburg, Germany
2. Ioffe Physico‐Technical Institute, 194021 St. Petersburg, Russia
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200304320
Reference25 articles.
1. M. J. F.Digonnet(editor) Rare earth doped fibre lasers and amplifiers (Marcel Dekker New York 1993).
2. Room‐temperature luminescence from Er‐implanted semi‐insulating polycrystalline silicon
3. Optical Direct and Indirect Excitation of Er3+ Ions In Silicon
4. Temperature dependence and quenching processes of the intra-4fluminescence of Er in crystalline Si
5. Erbium in oxygen‐doped silicon: Optical excitation
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1. In-situ doping of erbium in hydrogenated amorphous carbon by low temperature metalorganic radio frequency plasma enhanced chemical vapor deposition;Thin Solid Films;2014-11
2. Erbium-Doped Amorphous Carbon-Based Thin Films: A Photonic Material Prepared by Low-Temperature RF-PEMOCVD;Materials;2014-02-27
3. Thermal quenching of the photoluminescence in amorphous silicon–carbon alloys doped with Er ions;Journal of Materials Science: Materials in Electronics;2007-03-29
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