Magnetic properties of the rare‐earth‐doped semiconductor GaEuN-Reference-Cited by-同舟云学术

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Magnetic properties of the rare‐earth‐doped semiconductor GaEuN

Published:2003-11-24 Issue:7 Volume: Page:2864-2868
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Tanaka H.¹,Hashimoto M.¹,Emura S.¹,Yanase A.¹,Asano R.¹,Zhou Y.‐K.¹,Bang H.²,Akimoto K.²,Honma T.³,Umesaki N.³,Asahi H.

Affiliation:

1. The Institute of Scientific and Industrial Research, Osaka University, 8‐1 Mihogaoka, Ibaraki, Osaka 567‐0047, Japan

2. Institute of Applied Physics, University of Tsukuba, Ichinoya,1‐1‐1 Tennodai, Tsukuba, Ibaraki 305‐8573, Japan

3. Japan Synchrotron Radiation Research Institute, Mikazuki, Hyogo 679‐5198, Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303516

Reference15 articles.

1. MRS Bul. 1999 24 9

2. Visible cathodoluminescence of GaN doped with Dy, Er, and Tm

3. Blue emission from Tm-doped GaN electroluminescent devices

4. Green Emission from Tb-Doped GaN Grown by MOVPE

5. Epitaxial growth of Eu-doped GaN by gas source molecular beam epitaxy

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1. Enhancing Electronic and Magnetic Properties in Eu‐Doped GaN Nanowires via p‐f Hybridization of Eu‐Defect Complexes;Advanced Theory and Simulations;2024-06-09

2. Tuning the valence and concentration of europium and luminescence centers in GaN through co-doping and defect association;Physical Review Materials;2021-03-04

3. III-Nitride Dilute Magnetic Semiconductors;Molecular Beam Epitaxy;2019-02-08

4. Electronic and magnetic properties of defect complexes in Eu-doped GaN: First-principles calculations;Physica B: Condensed Matter;2018-08

5. Ferromagnetism in GaN doped with transition metals and rare-earth elements: A review;Chinese Journal of Physics;2018-08

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