Optical micro‐characterization of group‐III‐nitrides: correlation of structural, electronic and optical properties
Author:
Affiliation:
1. Institut für Experimentelle Physik, Otto‐von‐Guericke‐Universität Magdeburg, Germany
2. Institut für Festkörperphysik, Technische Universität Berlin, Germany
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303125
Reference77 articles.
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3. Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods
4. Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth
5. Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy
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