Impact of growth conditions on the spatial non-uniformities of composition in InGaP epitaxial layers-Reference-Cited by-同舟云学术

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Impact of growth conditions on the spatial non-uniformities of composition in InGaP epitaxial layers

Published:2007-04 Issue:4 Volume:4 Page:1419-1422
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Gregušová D.,Kučera M.,Hasenöhrl S.,Vávra I.,Štrichovanec P.,Martaus J.,Novák J.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference9 articles.

1. Evolution of microstructure and dislocation dynamics in In[sub x]Ga[sub 1−x]P graded buffers grown on GaP by metalorganic vapor phase epitaxy: Engineering device-quality substrate materials

2. Growth and characterization of compositionally graded InGaP layers on GaAs substrate by solid-source molecular beam epitaxy

3. Material properties of graded composition InxGa1−xP buffer layers grown on GaP by organometallic vapor phase epitaxy

4. Growth and characterisation of layers with composition close to crossover from direct to indirect band gap

5. Photoluminescence Processes inIn1−xGaxPat 2°K

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metamorphic GaAsP and InGaP Solar Cells on GaAs;IEEE Journal of Photovoltaics;2012-01

2. Epitaxial Growth of GaP/InxGa1-xP (xIn ≥ 0.27) Virtual Substrate for Optoelectronic Applications;Journal of Electrical Engineering;2011-03-01

3. Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells;Journal of Applied Physics;2011-01

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