Author:
Micovic M.,Kurdoghlian A.,Hashimoto P.,Hu M.,Antcliffe M.,Willadsen P. J.,Wong W. S.,Bowen R.,Milosavljevic I.,Yoon Y.,Schmitz A.,Wetzel M.,Chow D. H.
Reference7 articles.
1. , , , , , , , , , , and , IEDM Proceedings, 2006.
2. et al., A 427 mW, 20% compact W-band InP HEMT MMIC power amplifier, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, June 1999, pp. 95–98.
3. et al., GaN Double Heterojunction Field Effect Transistor for Microwave and Millimeterwave Power Applications, IEDM Technical Digest, December 2004, pp. 807–810.
4. Punch-through in short-channel AlGaN/GaN HFETs
5. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
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