Design and realization of GaN RF-devices and circuits from 1 to 30 GHz-Reference-Cited by-同舟云学术

Design and realization of GaN RF-devices and circuits from 1 to 30 GHz

Published:2010-02 Issue:1 Volume:2 Page:115-120
ISSN:1759-0787
Container-title:International Journal of Microwave and Wireless Technologies
language:en
Short-container-title:Int. j. microw. wirel. technol.

Author:

Kühn Jutta,Musser Markus,van Raay Friedbert,Kiefer Rudolf,Seelmann-Eggebert Matthias,Mikulla Michael,Quay Rüdiger,Rödle Thomas,Ambacher Oliver

Abstract

The design, realization, and characterization of highly efficient powerbars and monolithic microwave integrated circuit (MMIC) high-power amplifiers (HPAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) are presented for the frequency range between 1 and 30 GHz. Packaged powerbars for the frequency range between 1 and 6 GHz have been developed based on a process called GaN50 with a gate length of 0.5 μm. Based on a GaN25 process with a gate length of 0.25 μm, high-power MMIC amplifiers are presented starting from 6 GHz up to advanced X-band amplifiers and robust LNAs in microstrip transmission line technology.

Publisher

Cambridge University Press (CUP)

Subject

Electrical and Electronic Engineering

Reference13 articles.

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5. GaN-Based RF Power Devices and Amplifiers

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