AlGaN/GaN power amplifiers for ISM applications

Author:

Krausse D.,Benkhelifa F.,Reiner R.,Quay R.,Ambacher O.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. AlGaN/GaN-based power amplifiers for mobile radio applications: a review from the system suppliers perspective;Wiegner;Int J Microwave Wireless Technol,2010

2. Design of a highly efficient 24-GHz octave bandwidth GaN-HEMT power amplifier;Saad;Microwave Theor Techn,2010

3. Costrini C, Calori M, Centronio A, Lanziri C, Lavanga S, Peroni M, et al. A 20W micro-strip X-band AlGaN/GaN HPA MMIC for advanced radar applications. In: Conference on wireless technology, EuWiT, Amsterdam, Netherlands; 2008.

4. Everts J, Dasz J, den Keybusx JV, Germainz M, Driesen J. GaN-based power transistors for future power electronic converters. In: IEEE benelux young researchers symposium, Leuven, Belgium; 2010.

5. Saito W, Takada Y, Kuraguchi M, Tsuda K, Omura L, Ogura T. 600V AlGaN/GaN power-HEMT: design, fabrication and demonstration on high voltage DC–DC converter. In: 49th Annual IEEE international electron devices meeting, IEDM, Washington, USA; 2003.

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