Fabrication of p‐side down GaN vertical light emitting diodes on copper substrates by laser lift‐off
Author:
Affiliation:
1. Institute of Electro‐Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan
2. Highlink Corporation, HsinChu, Taiwan
3. Department of Materials Engineering, National Chung Hsing University, Taichung, Taiwan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200405066
Reference11 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
3. H.Morkoc Nitride Semiconductors and Devices (Springer Berlin 1999).
4. Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
5. InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off
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1. Optimized via-hole structure in GaN-based vertical-injection light-emitting diodes;Journal of the Korean Physical Society;2016-01
2. Novel thin-GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light;Nanoscale Research Letters;2015-04-15
3. Enhancement of light output power of GaN-based vertical light emitting diodes by optimizing n-GaN thickness;Microelectronic Engineering;2011-10
4. Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching;IEEE Photonics Technology Letters;2007-06
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