Properties of n‐layers formed by low‐energy ion beam milling of chalcogenides epitaxial films-Reference-Cited by-同舟云学术

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Properties of n‐layers formed by low‐energy ion beam milling of chalcogenides epitaxial films

Published:2003-02 Issue:3 Volume: Page:872-874
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Berchenko N. N.¹²,Bogoboyashchiy V. V.³,Izhnin I. I.⁴,Yudenkov V. A.²

Affiliation:

1. Institute of Physics, Rzeszow University, 16A Rejtana St., 35‐310 Rzeszow, Poland

2. Lviv Polytechnic National University, 12 Bandera St., 79013 Lviv, Ukraine

3. Kremenchuk State Polytechnical Institute, 20 Pershotravneva St., 39614 Kremenchuk, Ukraine

4. R & D Institute for Materials SRC “Carat”, 202 Stryjska St., 79031 Lviv, Ukraine

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200306259

Reference7 articles.

1. Characterisation of reactive-ion-etching-induced type-conversion in p-type HgCdTe using scanning laser microscopy

2. p-to-n conversion in Hg1−xZnxTe by ion beam milling effect

3. Evaluation of doping profiles in ion‐implanted PbTe

4. Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor Surface

5. Modifications to the electrical properties of PbTe by low‐energy ion bombardment—interpretation in terms of differential sputtering and atomic mixing

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies;Opto-Electronics Review;2017-06

2. Comparison of the p-to-n conversion caused by ion beam milling or anodic oxidation/annealing in Hg1–xCdxTe and Pb1–xSnxTe;physica status solidi (c);2007-04

3. Influence of the low energy ion beam milling on the electrical properties of InSb;physica status solidi (c);2005-03

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