Influence of the low energy ion beam milling on the electrical properties of InSb-Reference-Cited by-同舟云学术

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Influence of the low energy ion beam milling on the electrical properties of InSb

Published:2005-03 Issue:4 Volume:2 Page:1418-1422
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Berchenko N. N.¹,Bogoboyashchiy V. V.²,Izhnin I. I.³,Pociask M.⁴,Sheregii E. M.⁴,Yudenkov V. A.¹

Affiliation:

1. Lviv Polytechnic National University, 12 Bandera Str., 79013 Lviv, Ukraine

2. Kremenchuk State Polytechnical Institute, 20 Pershotravneva Str., 39614 Kremenchuk, Ukraine

3. R&D Institute for Materials SRC "Carat", 202 Stryjska Str., 79031 Lviv, Ukraine

4. Institute of Physics, RzeszowUniversity,16A2 Rejtana Str., 35‐310 Rzeszow, Poland

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200460478

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies;Opto-Electronics Review;2017-06

2. Comparison of electrical properties of HgCdTe subsurface layers formed by low energy ion beam milling or anodic oxidation;Surface and Interface Analysis;2010-04-30

3. Electronic transport characterization of AlGaN∕GaN heterostructures using quantitative mobility spectrum analysis;Applied Physics Letters;2007-09-03

4. Quantitative mobility spectrum analysis of AlGaN∕GaN heterostructures using variable-field hall measurements;Applied Physics Letters;2006-04-03

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