p-to-n conversion in Hg1−xZnxTe by ion beam milling effect
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Electrical characterization of as-grown, annealed and indium-doped Hg1-xZnxTe for x near 0.15
2. Study of p-to-n-type conversion in bulk Hg1-xZnxTe near x = 0.15
3. Type conversion of (Hg,Cd)Te induced by the redistribution of residual acceptor impurities
4. Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: I . Defect Structure of Undoped and Copper Doped
5. Electrical doping of HgCdTe by ion implantation and heat treatment
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3. Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies;Opto-Electronics Review;2017-06
4. Modification of Hg1−Cd Te and related materials by ion-beam treatment;Journal of Alloys and Compounds;2004-05
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