Dislocation-related electronic states in partially strain-relaxed InGaAs/GaAs heterostructures grown by MOVPE-Reference-Cited by-同舟云学术

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Dislocation-related electronic states in partially strain-relaxed InGaAs/GaAs heterostructures grown by MOVPE

Published:2007-07 Issue:8 Volume:4 Page:3037-3042
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Gelczuk Ł.,Dąbrowska-Szata M.,Jóźwiak G.,Radziewicz D.,Serafińczuk J.,Dłużewski P.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference16 articles.

1. Understanding defects in semiconductors as key to advancing device technology

2. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors

3. Bandlike and localized states at extended defects in silicon

4. Deep-Level Transient-Spectroscopy for Localized States at Extended Defects in Semiconductors

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anisotropic misfit strain relaxation in lattice mismatched InGaAs/GaAs heterostructures grown by MOVPE;Journal of Crystal Growth;2008-06

2. Deep traps and optical properties of partially strain-relaxed InGaAs/GaAs heterostructures;Materials Science and Engineering: B;2008-02

3. Structural and optical measurements of residual strain and relaxation of lattice mismatched InGaAs/GaAs heterostructures;2007 International Students and Young Scientists Workshop on Photonics and Microsystems;2007-07

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