Onset of GaSb/GaAs quantum dot formation
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference13 articles.
1. Radiative recombination in type‐II GaSb/GaAs quantum dots
2. Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy
3. Room temperature 1.3μm emission from self-assembled GaSb/GaAs quantum dots
4. 450 meV hole localization in GaSb/GaAs quantum dots
5. Evolution of GaSb epitaxy on GaAs(001)‐c(4×4)
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1. Metal-organic chemical vapor deposition of GaSb/GaAs quantum dots: the dependence of the morphology on growth temperature and vapour V/III ratio;Chemical Research in Chinese Universities;2014-01-09
2. Self-organized Formation and XSTM-Characterization of GaSb/GaAs Quantum Rings;Physics of Quantum Rings;2013-08-29
3. Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks;Journal of Physics D: Applied Physics;2013-07-02
4. Critical thickness of the 2-dimensional to 3-dimensional transition in GaSb/GaAs(001) quantum dot growth;Journal of Crystal Growth;2012-01
5. Confined States of Individual Type-II GaSb/GaAs Quantum Rings Studied by Cross-Sectional Scanning Tunneling Spectroscopy;Nano Letters;2010-09-23
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