Critical thickness of the 2-dimensional to 3-dimensional transition in GaSb/GaAs(001) quantum dot growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference41 articles.
1. Observation of Reentrant 2D to 3D Morphology Transition in Highly Strained Epitaxy: InAs on GaAs
2. Atomic structure of stacked InAs quantum dots grown by metal-organic chemical vapor deposition
3. Atomic structure and strain of the InAs wetting layer growing on GaAs(001)-c(4×4)
4. Atomically resolved structure of InAs quantum dots
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1. Optical absorption coefficient calculations of GaSb/GaAs quantum dots for intermediate band solar cell applications;Journal of Physics D: Applied Physics;2020-11-02
2. Strain-driven quantum dot self-assembly by molecular beam epitaxy;Journal of Applied Physics;2020-07-21
3. Influence of MBE growth parameters on GaSb/GaAs quantum dot morphology;Physica E: Low-dimensional Systems and Nanostructures;2020-04
4. A Simple Method for the Growth of Very Smooth and Ultra-Thin GaSb Films on GaAs (111) Substrate by MOCVD;Journal of Electronic Materials;2017-02-02
5. Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001);Applied Physics Letters;2016-09-05
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