Confined States of Individual Type-II GaSb/GaAs Quantum Rings Studied by Cross-Sectional Scanning Tunneling Spectroscopy-Reference-Cited by-同舟云学术

Confined States of Individual Type-II GaSb/GaAs Quantum Rings Studied by Cross-Sectional Scanning Tunneling Spectroscopy

Published:2010-09-23 Issue:10 Volume:10 Page:3972-3977
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Timm Rainer¹,Eisele Holger¹,Lenz Andrea¹,Ivanova Lena¹,Vossebürger Vivien¹,Warming Till¹,Bimberg Dieter¹,Farrer Ian¹,Ritchie David A.¹,Dähne Mario¹

Affiliation:

1. Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany, and Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl101831n

Reference28 articles.

1. Radiative recombination in type‐II GaSb/GaAs quantum dots

2. Optical exciton Aharonov-Bohm effect, persistent current, and magnetization in semiconductor nanorings of type I and II

3. 450 meV hole localization in GaSb/GaAs quantum dots

4. 106years extrapolated hole storage time in GaSb∕AlAs quantum dots

5. GaSb∕GaAs type II quantum dot solar cells for enhanced infrared spectral response

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