Investigation of defects created by growth of InAs quantum dots in GaAs-Reference-Cited by-同舟云学术

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Investigation of defects created by growth of InAs quantum dots in GaAs

Published:2003-02 Issue:3 Volume: Page:975-980
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Dózsa L.¹²,Horváth Zs. J.¹,Hubik P.³,Kristofik J.³,Mares J. J.³,Gombia E.⁴,Frigeri P.⁴,Mosca R.⁴,Franchi S.⁴,Pécz B.¹,Dobos L.¹

Affiliation:

1. Research Institute for Technical Physics and Materials Science, Konkoly‐Thege 29–33, 1121 Budapest, Hungary

2. Present address: MTA MFA, PO Box 49, 1525 Budapest, Hungary

3. Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 162 53 Praha 6, Czech Republic

4. MASPEC Institute – CNR, Parco Area delle Scienze 37a, 43010 Fontanini‐Parma, Italy

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200306327

Reference13 articles.

1. Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy

2. Capacitance–voltage studies of the electrostatic profile of single barrier GaAs/AlAs/GaAs structures containing self assembled quantum dots

3. Deep level transient spectroscopy characterization of InAs self-assembled quantum dots

4. Deep and shallow electronic states at ultrathin InAs insertions in GaAs investigated by capacitance spectroscopy

5. Non-exponential capture of electrons in GaAs with embedded InAs quantum dots

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical peculiarities in GaAs and Si based low dimensional structures;Current Applied Physics;2006-02

2. Instability of electrical characteristics of GaAs/InAs quantum dot structures;physica status solidi (c);2005-03

3. Lateral conductivity in GaAs/InAs quantum dot structures;The European Physical Journal Applied Physics;2004-07

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