Instability of electrical characteristics of GaAs/InAs quantum dot structures-Reference-Cited by-同舟云学术

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Instability of electrical characteristics of GaAs/InAs quantum dot structures

Published:2005-03 Issue:4 Volume:2 Page:1342-1346
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Dózsa L.,Horváth Zs. J.¹,Gombia E.²,Mosca R.²,Franchi S.²,Frigeri P.²,Raineri V.³,Giannazo F.³

Affiliation:

1. Research Institute for Technical Physics and Materials Science, Konkoly‐Thege 29‐33, 1121 Budapest, Hungary

2. MASPEC Institute ‐ C.N.R., Parco Area delle Scienze 37a, 43010 Fontanini‐Parma, Italy

3. CNR‐IMETEM Stradale Primosole 50, 95121 Catania, Italy MASPEC Institute ‐ C.N.R., Parco Area delle Scienze 37a, 43010 Fontanini‐Parma, Italy

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200460449

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Stress-induced local trap levels in Au/n-GaAs Schottky diodes with embedded InAs quantum dots;IEEE Electron Device Letters;2006-05

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