Lateral conductivity in GaAs/InAs quantum dot structures-Reference-Cited by-同舟云学术

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Lateral conductivity in GaAs/InAs quantum dot structures

Published:2004-07 Issue:1-3 Volume:27 Page:93-95
ISSN:1286-0042
Container-title:The European Physical Journal Applied Physics
language:
Short-container-title:Eur. Phys. J. Appl. Phys.

Author:

Dózsa L.,Tóth A. L.,Horváth Zs. J,Hubík P.,Krištofik J.,Mareš J. J.,Gombia E.,Mosca R.,Franchi S.,Frigeri P.

Publisher

EDP Sciences

Subject

Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://www.epjap.org/10.1051/epjap:2004113/pdf

Reference10 articles.

1. Non-exponential capture of electrons in GaAs with embedded InAs quantum dots

2. Metastable population of self-organized InAs/GaAs quantum dots

3. Electron escape from InAs quantum dots

4. The effect of InAs quantum layer and quantum dots on the electrical characteristics of GaAs structures

5. Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical peculiarities in GaAs and Si based low dimensional structures;Current Applied Physics;2006-02

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