The effect of InAs quantum layer and quantum dots on the electrical characteristics of GaAs structures-Reference-Cited by-同舟云学术

The effect of InAs quantum layer and quantum dots on the electrical characteristics of GaAs structures

Published:2000-05 Issue: Volume:51-52 Page:85-92
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Dózsa L,Horváth Zs.J,Van Tuyen Vo,Pődör B,Mohácsy T,Franchi S,Frigeri P,Gombia E,Mosca R

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Spectroscopy of Quantum Levels in Charge-Tunable InGaAs Quantum Dots

2. Electron and hole energy levels in InAs self‐assembled quantum dots

3. Deep level transient spectroscopy of InP quantum dots

4. Dynamic Properties of InAs Self-Assembled Quantum Dots Evaluated by Capacitance-Voltage Measurements

5. Deep-level transient spectroscopy in InAs/GaAs laser structures with vertically coupled quantum dots

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