Improved performance of GaInN based deep green light emitting diodes through V-defect reduction
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference4 articles.
1. Phase separation in InGaN grown by metalorganic chemical vapor deposition
2. Formation of V-shaped pits in InGaN/GaN multiquantum wells and bulk InGaN films
3. Misfit dislocations in In-rich InGaN/GaN quantum well structures
4. GaInN∕GaN growth optimization for high-power green light-emitting diodes
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1. Influence of Growth Parameters on a‐Plane InGaN/GaN Heterostructures on r‐Sapphire;physica status solidi (b);2019-03-14
2. Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells;SPIE Proceedings;2016-02-26
3. Quantitative Chemical Mapping of InGaN Quantum Wells from Calibrated High-Angle Annular Dark Field Micrographs;Microscopy and Microanalysis;2015-06-30
4. Current Components and Their Temperature Dependence of Green and Blue Light-Emitting Diodes: A Quantitative Comparison;IEEE Transactions on Electron Devices;2014-04
5. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100);Applied Physics Letters;2013-12-02
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