Hall effect measurement of InAsN alloy films grown directly on GaAs(001) substrates by RF‐MBE
Author:
Affiliation:
1. Department of Advanced Materials Science, University of Tokyo, 5‐1‐5 Kashiwanoha, Kashiwa, Chiba 277‐8562, Japan
2. Department of Applied Physics, The University of Tokyo, 7‐3‐1 Hongo, Bunkyo‐ku, Tokyo 113‐8656, Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303490
Reference9 articles.
1. Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
2. RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layer
3. S.Nishio A.Nishikawa R.Katayama K.Onabe andY.Shiraki 21th Electron. Materials Symp. (2002).
4. Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements
5. Band Gap Reduction in InAsN Alloys
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