RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Growth of InNAs on GaAs(100) substrates by molecular-beam epitaxy
2. MOCVD growth of InAsN for infrared applications
3. MOCVD Growth of InNxAs1?x on GaAs Using Dimethylhydrazine
4. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
5. Solubility of nitrogen in binary III–V systems
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1. LPE growth and characterization of InAs1−xNx films;Journal of Crystal Growth;2014-07
2. Optical properties of narrow-bandgap dilute nitrides;Quantum Sensing and Nanophotonic Devices VIII;2011-01-22
3. Enhancing nitrogen solubility in GaAs and InAs by surface kinetics: Anab initiostudy;Physical Review B;2009-04-14
4. InAsN quantum dots grown on GaAs(001) substrates by MOVPE;physica status solidi (c);2007-06
5. MOVPE and characterization of InAsN/GaAs multiple quantum wells;Journal of Crystal Growth;2007-01
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