The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon-Reference-Cited by-同舟云学术

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The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon

Published:2004-03 Issue:5 Volume:1 Page:1097-1114
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Kočka J.¹,Fejfar A.¹,Mates T.¹,Fojtík P.¹,Dohnalová K.¹,Luterová K.¹,Stuchlík J.¹,Stuchlíková H.¹,Pelant I.¹,Rezek B.¹²,Stemmer A.²,Ito M.³

Affiliation:

1. Thin Films Department, Institute of Physics AS CR, Cukrovarnická 10, 162 53 Prague, Czech Republic

2. Nanotechnology Group, Swiss Federal Institute of Technology, Tannenstr. 3, 8092 Zurich, Switzerland

3. Toppan Printing Co., 4‐2‐3 Takanodai‐Minami, Sugito machi, Kita Katsushika, Saitama, Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200304315

Reference46 articles.

1. Role of grains in protocrystalline silicon layers grown at very low substrate temperatures and studied by atomic force microscopy

2. Rapid crystallization of amorphous silicon at room temperature

3. XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT's

4. Excimer‐laser‐induced crystallization of hydrogenated amorphous silicon

5. Recrystallization of amorphous silicon films deposited by low‐pressure chemical vapor deposition from Si2H6gas

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1. Polycrystalline silicon, a molecular dynamics study: II. Grains, grain boundaries and their structure;Modelling and Simulation in Materials Science and Engineering;2024-07-26

2. Polycrystalline silicon, a molecular dynamics study: I. Deposition and growth modes;Modelling and Simulation in Materials Science and Engineering;2024-07-26

3. Pre-annealing for improved LPCVD deposited boron-doped poly-Si hole-selective contacts;Solar Energy Materials and Solar Cells;2023-03

4. Extraction of the defect density of states in microcrystalline silicon from experimental results and simulation studies;Journal of Semiconductors;2015-09

5. Structural properties of hydrogenated microcrystalline silicon–carbon alloys deposited by Radio Frequency Plasma Enhanced Chemical Vapor Deposition: Effect of microcrystalline silicon seed layer and methane flow rate;Thin Solid Films;2014-01

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