Electrical properties and device characteristics of InAlN/AlGaN/ AlN/GaN heterostructure field effect transistors-Reference-Cited by-同舟云学术

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Electrical properties and device characteristics of InAlN/AlGaN/ AlN/GaN heterostructure field effect transistors

Published:2009-01-26 Issue:S2 Volume:6 Page:S1056-S1060
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi (c)

Author:

Hiroki Masanobu,Maeda Narihiko,Kobayashi Takashi

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer;Materials Science in Semiconductor Processing;2022-06

2. The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure;Crystals;2022-05-19

3. Simulation Study of Enhancement-Mode InAlN/GaN HEMT with InGaN Cap Layer;Journal of Nanoscience and Nanotechnology;2018-11-01

4. Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt- and Ni-based gate stacks;physica status solidi (a);2017-07-20

5. Control of Al2O3/InAlN interface by two-step atomic layer deposition combined with high-temperature annealing;Japanese Journal of Applied Physics;2014-02-13

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